Yonsei Department of Physics and Professor Seong-Il Im's research team reported to academia an experiment to create a device using β‐Ga2O3, a newly emerging material.

Using n‐type β-Ga2O3 and MoTe2, a previously known p-type 2D semiconductor material, Schottky contact was implemented to realize JFET operation

This showed the application of photosensing to speed up.

Led by Dr. Won-joon Choi, Department of Physics, Yonsei University, this study was published in Advanced Materials.