2022.02.04
Yonsei Department of Physics and Professor Seong-Il Im's research team reported to academia an experiment to create a device using β‐Ga2O3, a newly emerging material.
Using n‐type β-Ga2O3 and MoTe2, a previously known p-type 2D semiconductor material, Schottky contact was implemented to realize JFET operation
This showed the application of photosensing to speed up.
Led by Dr. Won-joon Choi, Department of Physics, Yonsei University, this study was published in Advanced Materials.
Author Wonjun Choi, Jongtae Ahn, Ki-Tae Kim, Hye-Jin Jin, Sungjae Hong, Do Kyung Hwang, Seongil Im
Journal Advanced Materials
DOI doi.org/10.1002/adma.202103079
publish 2021 Aug 02